| 摘要 |
PURPOSE:To prevent malfunction occurring and to accelerate a read operation by interposing a buffer circuit between a read bus which reads out a data signal and a sense amplifier. CONSTITUTION:The semiconductor memory is provided with a write bus 3w and the read bus 3r as data buses, and a transfer gate 2 is provided between the write bus 3w and the sense amplifier 1. And the buffer circuit 5 which performs the transmission of the data signal from a sense amplifier 1 side to a read bus 3r side and prevents the back flow of the signal from the read bus 3r side to the sense amplifier 1 side is provided between the read bus 3r and the sense amplifier 1. Thereby, acceleration can be attained while preventing the malfunction occurring in the read operation. |
