INSULATED GATE TYPE FIELD EFFECT TRANSISTOR,申请号JP19890213178-传众专利搜索

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发明名称	INSULATED GATE TYPE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH0376272(A)	申请公布日期	1991.04.02
申请号	JP19890213178	申请日期	1989.08.18
申请人	SEIKO INSTR INC	发明人	INOUE SHIGETO
分类号	H01L21/8247;H01L29/78;H01L29/788;H01L29/792	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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