| 摘要 |
PURPOSE: To introduce a complementary semiconductor advantageously by including at least one thin complementary sublayer in a photoelectric conversion layer and forming the complementary sublayer closely to one or several region where the square of the photoelectric field of the stationary wave produced through combination of radiation of an incident light and a reflected light, is maximized. CONSTITUTION: Three i-type conductive phase complementary sublayers 13a, 13b, 13c are included in an i-type sublayer 7b. Each phase complementary sublayer is thinner than the i-type sublayer 7b and composed of a semiconductor material having a light absorption threshold value lower than that of a semiconductor substantially composing a photoelectric conversion layer 7 and a diffusion length shorter than that of charges generated by radiation of light passing through a cell. The phase complementary sublayers 13a, 13b, 13c are arranged closely to several regions in the i-type sublayer 7b where the square of photoelectric field E<2> of stationary wave, produced through combination of radiation of incident light and reflected light, is maximized. |
