SEMICONDUCTOR LUMINOUS DEVICE

摘要

PURPOSE:To manufacture the luminous device with the stable traverse mode oscillation by a method wherein the striped groove the B surface of which is exposed to the internal slope is formed in the semiconductor substrate and the clad layer is grown in the overall surface including the active layer in the groove. CONSTITUTION:The P type InP current blocking layer 12 is epitaxially grown in the N type InP substrate 11 and the striped groove 13 cut in the substrate 11 making use of the mixed solution of HCl and HNO3 and the like is formed in the direction of 011 with the B surface of the groove 13 exposed to the internal slope. Next the N type InP guide layer 14 is grown on the groove 13 being separated by the layer 12 and the groove 13 and the non-dope InGaAsP active layer 15 is likewise accumulated. Then the P type InP clad layer 16 is grown to fill the vacancy above the groove 13 and the layer 16 is further covered with the P type InGaAsP cap layer 17 whereon the P side electrode 18 is provided while the reverse side of the substrate 11 is coated with the N side electrode 19.