| 摘要 |
PURPOSE:To realize a quantum fine line or a quantum box which is high in light emitting efficiency and whose active region is large by a method wherein a superlattice structure is cut so as to be 2mum or so thick, and it is thermally treated as covered with SiO2, Si3N4, or the like. CONSTITUTION:A lower clad layer 2 of AlXGa1-XAs (x=0.3) 2mum in thickness, a superlattice layer 3 640Angstrom in thickness, and an upper clad layer 5 of AlXGa1-XAs (x=0.3) 1mum in thickness are successively laminated on a GaAs substrate 1. Then, a ridge structure 2mum in width and 1.2mum in height is formed on the surface of a growth wafer through etching, and then SiO2 is deposited on the surface of the ridge structure. The growth wafer is laid on another GaAs wafer making its SiO2 coated face overlap the GaAs wafer, which is thermally treated in a hydrogen atmosphere under such a condition that a temperature-rise rate, a heat treatment temperature, and heat treatment time are set to 30 deg.C/second, 950 deg.C, and 30 seconds respectively. By this heat treatment, the mixed crystallization of a superlattice part starts partially from its side in contact with an SiO2 layer 6 in a lateral direction and a superlattice structure is left only near the center of the ridge structure. |
