| 摘要 |
PURPOSE:To obtain a crystal semiconductor layer which is large in grain diameter and small in grain boundary so as to improve a photovoltaic element in photoelectric conversion efficiency by a method wherein a crystal semiconductor layer is formed on two or more insulating regions surrounded with a conductive region. CONSTITUTION:A metal conductive layer 2 is formed on an insulating substrate 1 in gridiron, crystal semiconductor layers 3 are formed so as to cover the squares of a gridiron as separated from each other on the center of the width of the conductive layer 2, amorphous semiconductor layers 4-7 of P-type, N-type, I-type, and P-type are formed on the crystal semiconductor layers 3 and the conductive layer 2 exposed between the adjacent crystal semiconductor layers 3, and a transparent electrode is built thereon. Recrystallization takes place starting from the center of the insulating substrate 1 surrounded with the conductive layer 2 toward the peripheral part through the control of the temperature of the conductive layer 2, and a grain boundary part concentrates nearly on the center of the conductive layer 2. By this setup, a photovoltaic element provided with an crystal semiconductor layer of high quality large in grain diameter and small in grain boundary can be obtained. |
