| 摘要 |
<p>A semiconductor device of the master slice type comprises a basic cell comprising first and second MOS transistors (Q1,Q2) of a first conductivity type, between which one (2) of a source region and a drain region is commonly used; third and fourth MOS transistors (Q3,Q4) of the first conductivity type, between which one (5) of a source region and a drain region is commonly used; fifth and sixth MOS transistors (Q5,Q6) of a second conductivity type, between which one (8) of a source region and a drain region is commonly used; and seventh and eighth MOS transistors (Q7,Q8) ofthe second conductivity type, between which one (11) of a source region and a drain region is commonly used. A gate electrode (G1) is commonly used between the first and third MOS transistors (Q1,Q3), a gate electrode (G2) is commonly used between the second and fourth MOS transistors (Q2,Q4), and a gate electrode (G3) is commonly used between the fifth and seventh MOS transistors (Q5,Q7).</p> |
