| 摘要 |
PURPOSE:To attain phase change recording of a rewriting type by using a thin-film material, the optical constant of which is changed by irradiation with a laser beam and, the detectable change of which is caused mainly by a change in the phase of the reflected light or transmitted light of the incident light. CONSTITUTION:The optical layer 2 consisting of transparent dielectrics, etc., is provided on a substrate 1 and a recording thin film 3 is provided thereon. Further, a transparent dielectric layer 4 and a reflecting layer 5 are provided. A transparent and tightly adhered protective layer 6 is provided thereon. The constitution in which the phase of the reflected light or transmitted light of the light entering before and after the change changes and the change in the quantity of the reflected light or transmitted light over the entire part by this phase change is detected is adopted. The recording optically equivalent to the phase change recording by ruggedness is, therefore, executed and the recording of a large recording density while the recording is the phase change recording is executed. The erasing and rewriting are possible in this way and the phase change recording of the rewriting type is executed. |
