| 摘要 |
PURPOSE:To execute a p-type doping operation whose controllability is excellent by a method wherein an organic magnesium compound having a cyclopenta ring in which one alkyl group having two or more carbon atoms has been substituted per cyclopenta ring is used as a doping source of magnesium. CONSTITUTION:A III-V compound semiconductor element is manufactured by using trimethylgallium (TMG), trimethylaluminum (TMA), trietylboron (TEB) and trimethylindium (TMI) as organic compounds of group III metals, by using phosphine (PH3), arsine (AsH3) and ammonium (NH3) as group V hydrides, by using silane (SiH4) as a doping source and by using (i-C3H8)2Cp2Mg or ((CH3)2 Cp)2Mg as a magnesium doping source. Desired raw-material gases are caused to flow through individual reaction tubes 11, 12, 13 of an MOCVD apparatus used for this manufacture; a substrate 15 is moved by using a computer- controlled motor; thereby, a multilayer structure can be manufactured on the substrate 15 at an arbitrary lamination cycle and with an arbitrary composition. |
