| 摘要 |
PURPOSE:To prevent current concentration to a transistor chip at a central section by inserting a resistor to the chip at the central section of a transistor in parallel operation. CONSTITUTION:Connection to a metallized pattern 5 forming a MOS capacitance chip for alignment by connecting wires 9 from an input lead 7, connection to a metallized pattern 5 shaping a MOS capacitance chip for alignment at a central section through a resistance section 3 and connection to the emitter electrodes of transistor chips 1 are conducted. The base electrodes of the transistor chips 1 are bonded with a grounding pattern 4 through the wires 9, and grounded. Collector electrodes on the rears of the transistor chips 1 are connected to a collector in a package by solder, and bonded with an output lead 8 by the connecting wires 9 from a metallized pattern 6 forming the collector. Accordingly, the resistance section is arranged at the central section of a transistor chip group in parallel operation, thus preventing current concentration at the central section. |
