Vertical MOSFET DRAM,申请号US19880201100-传众专利搜索

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发明名称	Vertical MOSFET DRAM
摘要
申请公布号	US4984030(A)	申请公布日期	1991.01.08
申请号	US19880201100	申请日期	1988.05.31
申请人	HITACHI, LTD.	发明人	SUNAMI, HIDEO;KURE, TOKUO;KAWAMOTO, YOSHIFUMI;TAMURA, MASAO;MIYAO, MASANOBU
分类号	G11C11/401;H01L21/033;H01L21/763;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H01L29/78	主分类号	G11C11/401
代理机构		代理人
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