| 摘要 |
PURPOSE: To increase accumulation capacity and to provide high integration, by connecting a stack and a trench capacitor to a source area in parallel, and connecting them to a drain area through an opening. CONSTITUTION: A trench 58 formed at a specified part between a source area 53 and a field oxide film 46, a diffusion layer 60 connected to the source area 53 formed of secodn conductive impurity on a substrate 40 outside a trench 58, a first polycrystal silicon layer 56 which, overlapped with word lines 50 and 51 while separated with a first insulation film 71, is connected to the source area 53, a dielectric film 62 formed over the surface inside the trench 58 and the first polycrystal silicon layer 56, a second polycrstal silicon layer 64 so formed at the upper part of the dielectric film 62 that the inside of the trench 58 is filled, a bit line 72 which, while connected to a drain area 52 through an opening, is separated with a second insulation film 70, are provided. Thus, increased accumulation capacity and higher integration are obtained. |
