| 摘要 |
PURPOSE:To improve a bipolar transistor of this design in resistance to both short-circuit and latchup by a method wherein the mutual space between two or more second semiconductor regions is made two times as large as the length of a channel. CONSTITUTION:A region 6 adjacent to the surface of a first semiconductor region 4 sandwiched between the surfaces of a second conductor layer 3 and a second conductor region 5 is defined as a channel region, and a mutual distance D between the second conductor regions 5 and a length L of the channel region 6 defined as the distance between the surfaces of the second conductor layer 3 and the second conductor region are so set as to satisfy an inequality, D>2L. An insulating film 7 formed on the channel region 6, a control electrode 8 built on the insulating film 7, a first primary electrode 9 provided onto the first and the second semiconductor region, 4 and 5, and a second primary electrode 10 formed on the second primary face of the second semiconductor layer 3 are provided. Therefore, the channel is lessened in width and a saturation current decreases. By this setup, a bipolar transistor of this design can be improved in resistance to both latchup and short-circuit. |
