| 摘要 |
1,255,918. Magneto-resistive device. SONY CORP. 22 July, 1970 [22 July, 1969], No. 35504/70. Heading H1K. A magneto-resistive element comprises an intrinsic semi-conductor substrate having formed therein a P-type region 33 and an N-type region 34 extending into the substrate from a common face thereof and spaced apart from one another, and an open cavity 17 formed in the substrate on its opposite face and having a wall adjacent to the regions 33 and 34, this wall being roughened to provide a recombination region. According to the magnetic field in which the device is situated the carriers passing between regions 33 and 34 will be directed towards or away from the recombination region during their passage and the current through the device will be varied accordingly. P+ type region 24 is provided surrounding region 33 as a channel stopper. Aluminium electrodes 13, 14 are provided and soldered to terminal electrodes 20, 21. The device is mounted on an insulating header 22 and encapsulated in epoxy resin 25. The characteristic of the device can be finally adjusted by sandblasting the wall of the cavity after encapsulation using an oscilloscope as a monitor. Magnetic yokes may be provided as control devices.
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