| 摘要 |
A protection device (10) for an integrated circuit (100) includes short (16) and longer (18a, 18b, 18c, 18d) channel length structures, each of which provides a parasitic bipolar transistor, connected between a terminal (102) of the integrated circuit (100) and a source (22) of reference voltage. The short channel length structure (16) has a breakdown voltage greater than the supply voltage for the integrated circuit (100), and less than the insulator damage threshold of the integrated circuit (100). The conduction through the short channel length structure (16) after initiation of a transient phenomena causes the longer channel length structure (18a, 18b, 18c, 18d) to conduct before the transient exceeds the breakdown voltage of the integrated circuit (100) and the short channel length structure (16). The longer channel length structure (18a, 18b, 18c, 18d) operates in the ''snap-back'' conduction mode when the current density exceeds a critical value to conduct away the transient energy. |
