| 摘要 |
<p>PURPOSE:To enable the capacitance of photodetectors to be augmented without increasing the wiring capacitance of a scanning wire by a method wherein a metallic reflective film reflecting outer infrared rays entering from the rear surface of a semiconductor substrate as well as an electrode formed on the surface of the metallic reflective film holding the second interlayer insulating film and impressed with voltage are provided. CONSTITUTION:An isolated reflective film 14 is formed on respective photodetectors; the reflective film 14 is electrically connected to electrodes 2 on the metal side through a hole 15 made in a part of an interlayer insulating film 13 between the electrodes 2 of the respective photodetectors; and furthermore, an electrode 16 to be impressed with voltage holding an insulating film 17 is formed on the reflective film 14. At this time, the accumulated capacitance of the photodetectors is augmented by the capacitance between the reflective film 14 and the electrode 16 formed on the reflective film 14 since the reflective film 14 is not only connected to the electrodes 2 but also can reflect the outer infrared rays not yet absorbed into the photodetectors so as to enhance the sensitivity. Through these procedures, the accumulated capacitance of the photodetectors can be augmented without increasing the wiring capacitance of scanning wire.</p> |
