| 摘要 |
PURPOSE:To obtain a semiconductor device which is superb in interface characteristics among semiconductor layers and is superb in performance even if regrowth of a semi conductor substance is performed by forming a surface protection layer which is superb in regrowth interface characteristics and by selectively eliminating the surface protection layer immediately before the regrowth. CONSTITUTION:An n-type GaAs layer 2 and an amorphous Sb layer 3 where Si is doped with high concentration is accumulated on a semi-insulation GaAs substrate 1. After that, an SiO2 film 4 is accumulated and SiO2 film at the intrinsic part of a hetero-junction bipolar transistor is eliminated by photolithography and etching. Then, a sample is input to an organic metal vapor growth device to allow Sb layer on a surface protection layer exposed onto the surface to be evaporated. Then, an n-type dope GaAs layer 5 is allowed to be subjected to epitaxial growth selectively only at a region where the SiO2 film is eliminated. After that, normal epitaxial growth without any selectivity is accumulated on each layer of a high dope p-type AlxGa1-xAs 6, an n-type dope Al0.3Ga0.7As 7, and a high dope n-type GaAs 8. |
