| 摘要 |
PURPOSE:To provide the source of drain of a MISFET semiconductor device on the surface of a semiconductor substrate and to facilitate an increases in the density of the device by a method wherein a dynamically reinforced gate electrode is provided at a first region, where the source or drain of the device can be constituted, in such a way that the side parts of the gate electrode lean on the first region. CONSTITUTION:Reactive gas is made to react on a substrate 1 consisting of a silicon single crystal semiconductor to form a silicon nitride film of a prescribed thickness. This silicon nitride film is removed using a first mask and a field insulator film 2 is buried and formed in a region P, from where the silicon nitride film is removed, in a prescribed thickness: Moreover, As is doped under the film 4 in a depth of a prescribed thickness or thinner by an ion-implantation method and the vicinity of the interior of the surface is turned into an N-type to form a film 20. A gate insulating film 11 consisting of this film 4 or the film 4 is removed and a gate insulating film 11 consisting of a film other than the film 4 and a capacitor 5 are formed. Moreover, the capacitor 5 is selectively removed by a photolithography technique in such a way that the edges on the peripheries of the sides of the capacitor 5 are not subjected to side etching and the vertical side surfaces of the edges can be formed, a first region 3 is made to remain and a region made of a high density is formed on the substrate. |
