发明名称 |
CONTINUOUS CHEMICAL VAPOR DEPOSITION GROWTH OF STRAIN LAYER SUPERLATTICES USING CONVENTIONAL CVD REACTORS |
摘要 |
A method of continuous deposition of alternate layers of two different semiconductor materials onto a substrate from source gases containing these different semiconductor materials which includes exposing the substrate to a periodic variation in the ratio of silicon to silicon-germanium concentrations in the source gases. |
申请公布号 |
EP0305195(A3) |
申请公布日期 |
1990.11.28 |
申请号 |
EP19880307920 |
申请日期 |
1988.08.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LINDBERG, KEITH J.;SMITH, JERRY D.;BEAN, KEN L. |
分类号 |
H01L21/20;C23C16/22;C23C16/44;C23C16/455;C30B25/02;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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