THERMAL CVD/PECVD REACTOR AND USE FOR THERMAL CHEMICAL VAPOR DEPOSITION OF SILICON DIOXIDE AND IN-SITU MULTI-STEP PLANARIZED PROCESS,申请号EP19870311193-传众专利搜索

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发明名称	THERMAL CVD/PECVD REACTOR AND USE FOR THERMAL CHEMICAL VAPOR DEPOSITION OF SILICON DIOXIDE AND IN-SITU MULTI-STEP PLANARIZED PROCESS
摘要
申请公布号	EP0272140(A3)	申请公布日期	1990.11.14
申请号	EP19870311193	申请日期	1987.12.18
申请人	APPLIED MATERIALS, INC.	发明人	WANG, DAVID NIN-KOU;WHITE, JOHN M.;LAW, KAM S.;LEUNG, CISSY;UMOTOY, SALVADOR P.;COLLINS, KENNETH S.;ADAMIK, JOHN A.;PERLOV, ILYA;MAYDAN, DAN
分类号	C23C16/48;C23C16/04;C23C16/40;C23C16/42;C23C16/44;C23C16/455;C23C16/46;C23C16/50;C23C16/509;C23C16/54;C23F4/00;C30B25/14;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H01L21/314;H01L21/316;H01L21/683;(IPC1-7):C23C16/54	主分类号	C23C16/48
代理机构		代理人
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