X-RAY MASKS, THEIR FABRICATION AND USE

摘要

An X-Ray mask for manufacturing chips is produced by forming an X-Ray transparent semiconductor membrane (18) with gaps and including X-Ray transparent material (42) in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.