发明名称 Gate array semiconductor integrated circuit.
摘要 <p>A gate array semiconductor integrated circuit includes a plurality of input/output cells (12), an input/output circuit (13, 14), and a bias circuit (15). The plurality of input/output cells (12) are arranged around an internal logic gate (11). The input/output circuit (13, 14) is formed by an aluminum master slice of the input/output cells (12) and performs an input/output operation for the internal logic gate (11). The bias circuit (15) is formed by the aluminum master slice of the input/output cells (12) to supply a predetermined bias voltage to the input/output circuit (13, 14).</p>
申请公布号 EP0395070(A2) 申请公布日期 1990.10.31
申请号 EP19900107995 申请日期 1990.04.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HARA, HIROYUKI, C/O INTELLECTUAL PROPERTY DIV.
分类号 H01L21/822;H01L21/82;H01L27/04;H01L27/118 主分类号 H01L21/822
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