| 摘要 |
PURPOSE:To contrive a reduction in a delivery date by a method wherein an impurity is implanted in a semiconductor substrate through a gate electrode to form a conductive region in the substrate surface which is positioned under the gate electrode. CONSTITUTION:A gate insulating film formation process for forming a gate insulating film 2 on the surface of a semiconductor substrate 1 and a gate electrode formation process for forming gate electrodes 3 on the film 2 are executed and thereafter, an impurity is implanted in the substrate 2 through the gate electrode 3 to form a conductive region 6 in the substrate surface which is positioned under the gate electrode. Accordingly, a state that the gate electrodes 3 are formed is held as the state of a semi-finished product and the formation of the conductive region and the like can be conducted after an order is accepted. Thereby, a manufacturing process subsequent to the state of a semi-finished product is shortened and a reduction in a delivery date can be contrived. |
