发明名称 SEMICONDUCTOR DICING METHOD
摘要 <p>PURPOSE:To prevent silver which has been once cut at the part of thick plating without a remarkable decrease of production, from being again fused by the heat at the time of cutting. CONSTITUTION:The feed speed of a blade 1 is set as follows; cutting is started from the one end L at a moving speed of 16mm/s, the speed is gradually increased, a semiconductor wafer 2 from a specified position L to a specified position L is cut at a speed of 40mm/s, the speed is gradually decreased from the specified position L, and the cutting is finished at the other end L of the semiconductor wafer 2, when the moving speed is 16mm/s. That is, the cutting speed is gradually increased at the beginning of cutting, and gradually decreased at the ending of cutting, so that the part of thick silver plating is slowly cut and the heat generated by cutting is sufficiently cooled by using cooling water. Thereby the silver-plated part can be prevented from fusing again, and the generation ratio of half-cut caused by that the silver-plated part again fuses is reduced from about 9% to about 0.55%.</p>
申请公布号 JPH06252261(A) 申请公布日期 1994.09.09
申请号 JP19930039742 申请日期 1993.03.01
申请人 ROHM CO LTD 发明人 OKI TETSUO;MURAKAMI YOSHIO
分类号 B23D47/08;B23D59/02;B28D5/02;H01L21/301;H01L21/302;H01L21/78;(IPC1-7):H01L21/78 主分类号 B23D47/08
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