| 摘要 |
<p>PURPOSE:To make a thin film transistor of this design controllable in threshold voltage and to prevent it from deteriorating in manufacturing yield without changing its usual element structure and manufacturing process by a method wherein the channel protective film of the thin film transistor Tr is formed of an SiO2(1-x)N4x/3 film. CONSTITUTION:A gate electrode 2, an SiN film 3, an a-Si film 4, an n<+>-a-Si film 5, a source electrode 8, and a drain electrode 7 are formed, the characteristics of a thin film transistor Tr is checked, and then a protective film 8 of the thin film transistor Tr is formed. The protective film 8 is formed of SiO2(1-x)N4x/3 SiO, where X is set in a range of 0-1. X is set in a range of 0-1 basing on the test result of the TFT Tr, whereby a threshold voltage is controlled to a required value and a manufacturing yield is prevented from deteriorating without changing an element structure and a manufacturing process.</p> |
