发明名称 Pre-charge circuit with a bipolar transistor
摘要 An output signal of a logic portion is inputted to the gate of FET inside an output buffer portion to inverse the signal polarity by this FET and is outputted through a bipolar transistor effecting an emitter follower operation or the like. An FET controlled by a clock signal is disposed between the base of the bipolar transistor and the ground and an FET which is turned ON during a pre-charge operation and when the bipolar transistor is OFF during logic calculation is disposed between the emitter and the ground so as to short-circuit the emitter and the ground during the pre-charge operation. In this manner, higher operation speed, higher integration density and high operation margin can be accomplished without losing the characteristic features of a Bi-CMOS dynamic logic circuit in its high operation speed and low power dissipation.
申请公布号 US4950925(A) 申请公布日期 1990.08.21
申请号 US19880246196 申请日期 1988.09.19
申请人 HITACHI, LTD. 发明人 DOI, TOSHIO;HAYASHI, TAKEHISA;ISHIBASHI, KENICHI
分类号 H03K17/567;H03K19/017;H03K19/08;H03K19/0944;H03K19/096 主分类号 H03K17/567
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