| 摘要 |
PURPOSE:To make it possible to measure the characteristics of the title wafer in a non-destructive manner by a method wherein emitted light is spectrally analyzed by using a spectroscope and forward current luminous intensity characteristics and an emission spectrum distribution are respectively measured by individual measuring devices. CONSTITUTION:When an LED wafer 12 is pinched by a clamp 11 and a forward current I is made to flow from an electrode 16, light emission is generated in the vicinity of a part, at which a negative pole 14 comes into contact to the wafer 12, of the pole 14. The light of this light emission is passed through an optical fiber 15, is inputted in a spectroscope 17, one side of output lights from the spectroscope 17 is inputted in a luminous output measuring device 18 and forward current luminous intensity characteristics are measured, while the other output light is inputted in an optical spectrum analyzer 19 and an emission spectrum distribution is measured. The above clamp 11 has a pinlike positive pole 13 on the leg on one side of its legs and the hollow negative pole 14, in the interior of which the fiber 15 is inserted, on the other leg. Thereby, the luminous characteristics of the wafer can be measured in a non- destructive manner without inflicting damage on the wafer surface. |
