发明名称 |
Method of manufacturing integrated circuit device including recessed channel transistor |
摘要 |
A method according to some embodiments of the invention includes defining an active region by forming a trench device isolation region on an integrated substrate, forming a mask pattern that exposes a channel sub-region of the active region and the trench device isolation region adjacent to the channel sub-region, etching the trench device isolation region, which is exposed by the mask pattern, to be recessed to a first depth using the mask pattern as an etch mask, etching the channel sub-region to form a gate trench having a second depth that is deeper than the first depth using the mask pattern as an etch mask, and forming a recess gate that fills the gate trench.
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申请公布号 |
US7326619(B2) |
申请公布日期 |
2008.02.05 |
申请号 |
US20040902642 |
申请日期 |
2004.07.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JONG-CHUL;SEO JUN;AHN TAE-HYUK;KWON HYUK-JIN;SONG JONG-HEUI;KANG DAE-KEUN |
分类号 |
H01L21/31;H01L21/336;H01L21/4763;H01L29/78 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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