| 摘要 |
<p>In a method of manufacturing an X-ray mask comprising a substrate (11), an X-ray transmission layer (12a, 12b) on the substrate (11), an X-ray absorption layer (15) on the X-ray transmission layer (12a, 12b), the X-ray transmission layer (12a, 12b) is flattened to remove undulation and to make roughness of the X-ray transmission layer smaller than 100 angstroms. The X-ray transmission layer (12a, 12b) may be formed by silicon carbide or silicon nitride. Alternatively, the X-ray transmission layer (12a, 12b) may have a multilayer structure of sandwiched structure comprising either a silicon carbide film or a silicon nitride film.</p> |
