| 摘要 |
PURPOSE:To obtain an a-SIC layer having the degree of light transmissibility of several times or more higher than that of a similar band gap by a method wherein, taking advantage of the fact that defects are lessened when a hydrogen plasma treatment is conducted on the a-SIC monoatomic layer, the deposition of an a-SIC two monoatomic layer of about 0.8mm or less and the performance of a hydrogen plasma treatment are repeated. CONSTITUTION:The lower electrode 12, with which a glass substrate 1 will be supported in the vacuum vessel 11 of a plasma CVD and hydrogen plasma treatment device, is placed on a heating stand 14 opposing to the upper electrode 15, and an introducing tube 18 and an exhaust tube 19 are attached to the vessel 11 penetrating its wall. After the vessel 11 has been evacuated using the exhaust tube 19, the substrate 1 is heated up to the prescribed temperature, the raw gas consisting of silane gas and hydrogen gas is introduced by the tube 18, and an a-SIC layer 2 is deposited. Then, hydrogen gas is introduced into the vessel 11, and a low defective a-SIC layer 3 is formed in a hydrogen plasma atmosphere 4. Then, a low defective a-SIC layer 6 is formed on the substrate 1 by repeating the above-mentioned treatment process. |
