| 摘要 |
<p>PURPOSE:To prevent a bonding pad from being stripped off and to easily measure a film thickness of an interlayer insulating film by a method wherein a lower layer of the bonding pad, a scribe region and an SOG film are isolated by using a polyimide film. CONSTITUTION:A field oxide film 2 is formed on the surface of a semiconductor substrate 1; an alignment pattern 3 is formed in a scribe region in between; an insulating film 4 is formed on the surface of the oxide film 2; a wiring layer 5 is formed on it; an interlayer insulating film 6 and a polyimide film 7 are formed one after another on the whole surface. Then, a resist film is formed on the whole surface of the polyimide film 7; the resist film in a region in which the polyimide film 7 is to be left is patterned; a resist film 8 is formed; the polyimide film 7 is etched and removed by using it as a mask. Then, the resist film 8 is removed; an SOG film 9 is formed on the whole surface; after that, the whole surface is etched; the surface of the interlayer insulating film 6 and the polyimide film 7 is exposed. After that, the polyimide film 7 is removed completely. Lastly, an interlayer insulating film 10 is formed on the whole surface; after that, it is patterned; a wiring layer 11 is formed on the surface of the scribing region and the interlayer insulating film 10.</p> |
