| 摘要 |
PURPOSE:To enable one-dimensional electrode to be confined in a very small region through the use of an inactive film by forming a semiconductor device whose carrier is the one-dimensional electrode produced at the summit of a triangular projecting part, in cross-section, formed on the surface of a silicon substrate, and covering that surface with the inactive film. CONSTITUTION:A transistor 3 is provided on the triangular projecting part 1, in cross- section formed long and narrowly at the upper part of a p-type silicon substrate 2, and along longitudinal direction thereof the carrier of the transistor 3 moves. In this transistor 3, an n-type region 4 for a drain, an active region 5, and an n-type region 6 for a source are formed along the summit 7 of the projecting part 1. A drain electrode 8 and a source electrode 9 are connected to the two n-type region 4, 6, at the tops thereof and a gate electrode 11 is formed on the active region 5 via a gate insulating film 10 consisting of silicon dioxide. When a positive voltage is applied to the gate electrode 11, because the n-type regions 4, 6 for the source and the drain are formed on the summit 7 of the triangular projecting part 1, in cross-section, the electrons appearing by inversion of the active layer 5 become one-dimensional electrode at the very narrow width part of the summit 7. Under the quantum limit, the elastic scattering of the electrons is suppressed so that high mobility can be achieved. |
