| 摘要 |
A method for producing a mask for X-ray lithography having an Al or other metal oxide film supported on an annular silicon base, comprises … … (a) depositing silicon oxide layers on both sides of a silicon wafer; … (b) etching windows in both oxide layers and depositing aluminium on one side of the wafer and wax on the other side, … (c) oxidising the aluminium layer, and … (d) removing the wax and etching the unprotected silicon, and … (e) forming a pattern on the oxide film using a photoresist and electroplating or vapour depositing a heavy metal (e.g. Au, W, Ti, Ta) through the patterned resist. … …<??>Alternatively, a metal oxide may be deposited on the wafer from the beginning, or first a metal layer is deposited and subsequently oxidized to the respective oxide before forming the annular silicon base. The mask does not suffer from any distortion and does preserve its accuracy even under the stresses incurred during the mask preparation and use. …<IMAGE>… |
