发明名称 X=-ray fluorescence analysis for investigating wafer specimens - uses primary radiation reflected from reference plane to enable accurate adjustment of angle of incidence
摘要 The arrangement contains a detector (12) of secondary radiation from the specimen (15) under investigation which is exposed to primary X-rays adjustable in at least one degree of freedom. A specimen carrying surface is passed at a defined distance over a parallel reference plane (22) from which the primary radiation is reflected under total reflection conditions. The primary beam path is then adjusted w.r.t. the reference plane and the spectrum of the secondary radiation is observed using the radiation detector. For a defined energy content of the primary beam, a secondary radiation intensity maximum is determined which is associated with a certain reference angle. USE/ADVANTAGE - For e.g. semiconductor wafer. Enables accurate definition and setting of angle of incidence of primary radiation on surface of the specimen than by conventional techniques.
申请公布号 DE3938193(A1) 申请公布日期 1990.06.07
申请号 DE19893938193 申请日期 1989.11.17
申请人 GKSS-FORSCHUNGSZENTRUM GEESTHACHT GMBH, 2054 GEESTHACHT, DE 发明人 SCHWENKE, HEINRICH, 2058 ESCHEBURG, DE;KNOTH, JOACHIM, 2050 HAMBURG, DE;SCHNEIDER, HARALD, 2054 GEESTHACHT, DE;WEISBROD, ULRICH, 2050 HAMBURG, DE;ROSOMM, HERBERT, 2054 GEESTHACHT, DE
分类号 G01N23/223 主分类号 G01N23/223
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