发明名称 |
Process for producing mutually spaced conductor elements on a substrate |
摘要 |
The invention relates to a process for producing on a substrate conductor elements which are mutually spaced by a submicron dimension. This process comprises the stages of producing on substrate (1) spacers, whose dimensions and spacing are a function of the dimensions and spacing of the elements (11a) to be produced, anisotropic deposition on the substrate and perpendicular thereto of the material (11a) constituting the spacers and elimination of said spacers. The invention applies to the production of any random elements and particularly to the production of slightly mutually spaced electric conductors.
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申请公布号 |
US4931137(A) |
申请公布日期 |
1990.06.05 |
申请号 |
US19870121678 |
申请日期 |
1987.11.17 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
SIBUET, HENRI |
分类号 |
H01L21/3205;G11B5/31;H01F41/34;H01L21/033;H01L21/28;H05K3/14;(IPC1-7):H01L21/00;H01L21/283;H01L21/308 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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