| 摘要 |
Integrated semiconductor device including an optoelectronic switching element, this element comprising: - two straight monomode light guides crossing over at a given angle 2 theta and composed of at least one heterostructure of III-V materials, which structure comprises a substrate S made of a confinement material and a guiding layer CG and a guide ribbon R, - a p-n junction made in the crossover region in a manner which is asymmetric with respect to the longitudinal plane bisecting the crossover angle, characterised in that it comprises first means, for minimising the losses when the p-n junction is active, including a structure for restricting current and second means, for minimising the losses when the junction is passive, including a structure for confining light, the said first and second means cooperating so that the outputs of the switching element are balanced. Application: production of switching matrices in telecommunications. <IMAGE>
|
