| 摘要 |
<p>The soft-error in an MOS d-RAM can be reduced by an impurity-doped region having a conductivity opposite to that of a substrate. The impurity-doped region is formed in the substrate and below and in contact with a field oxide layer formed on the substrate, for collecting minority carriers produced by incident radiation. A storage capacitor is formed on the field oxide layer for shielding the minority carriers. This device has the further advantage of not decreasing the density of a memory cell array.</p> |
