| 摘要 |
<p>A bonding pad (21a) for the main current electrode is formed to have a large area on a semiconductor chip (20). An emitter lead (24) serving as a main current external electrode structure having a large current capacity is soldered to the entire surface of the bonding pad (21a). With this construction, even if a large current flows when the load is short-circuited, for example, arc discharge due to cut-off of the current path will not occur, and therefore there is no possibility that the semiconductor device will explode.</p> |
