| 摘要 |
PURPOSE:To assure satisfactory capacitance by increasing the surface are of a capacitive storage electrode by restricing the thickness of the capacitive storage electrode on the side thereof connected to a source and a drain within a specific range, providing a capacitive dielectric film on the upper surface and sidewall of the capacitive storage electrode, and providing a capacitive opposite electrode covering the capacitive dielectric film therewith. CONSTITUTION:In a semiconductor storage device having a MOS transistor formed on a semiconductor substrate 1 and a capacitor connected to a source or a drain 5 of the MOS transistor, the thickness of a capacitive storage electrode 9a on the side thereof connected to said source and drain 5 falls within 0.2-5mum, and a capacitive dielectric film 13 is provided on the upper surface and side wall of said capacitive storage electrode 9a, and further a capacitive opposite electrode 14 is provided covering said capacitive dielectric film 13 therewith. For example, the thickness of a capacitive storage electrode 9a comprising N type-dopeed polycrystalline silicon is defined to be 0.8mum, and a side wall 12a comprising a polycrystalline silicon layer is formed on the sidewall of said electrode 9a. Further, after a capacitive opposite electrode 14 comprising the capacitive dielectric film 13 and polycrystalline silicon is formed, an interlayer insulating film 15 is formed. |
