| 摘要 |
PURPOSE:To obtain a semiconductor memory device from which a data can be read out and to which the data can be written by a method wherein a voltage is applied to a gate of a memory cell transistor from a single power supply. CONSTITUTION:During a readout operation, a ground voltage of 0V is used as a voltage to be applied to a gate of a memory cell transistor 4 from which a data is to be read out. Accordingly, in the same way as during a write operation, a power supply used to apply the voltage to the gate of the memory transistor 4 from which the data is to be read out is not required. In addition, even when memory information is erased, the ground voltage of 0V may be used as individual gate voltages for memory transistors 3 to 6. Accordingly; a power supply required when the memory information is erased is only a power supply used to apply a voltage to a drain line 1. Accordingly, during both the write operation and the readout operation, the power supply used to apply the voltage to the gate of the memory transistor required in addition to the power supply used to apply the voltage to the drain line may be only one power supply used to apply the voltage to a gate of a nonselective memory transistor. |
