| 摘要 |
<p>PURPOSE:To obtain a thin film resistor having a resistance value which makes almost no change due to temperature by a method wherein a Cr-Si-N-containing thin film resistor formed on a substrate is brought into an amorphous state, and an energy band structure is formed in a metallic film. CONSTITUTION:A gate oxide film 40, a gate layer 50, diffusion layers 60 and 65, a BPSG layer 70 and the like are successively formed on a semiconductor substrate 10. Then, a Cr-Si-N thin film resistor 80 is formed on the layer 70. In this case, the resistor 80 is in an amorphous state, and it is formed in such a manner that its energy band structure is constituted by a metallic film. Be sides, it is desirable that said resistor 80 has the compositional ratio of Cr=1, Si=2 to 2.5, N=0.3 to 1.5 and O= 0.5 to 1.5. As a result, a thin film resistor having almost no variation in resistance value due to temperature change can be obtained.</p> |
