| 摘要 |
PURPOSE:To perform filling in holes which is excellent in selectivity and low in interfacial resistance by a method wherein, after performing an Ar sputter- etching and cleaning process as well as the stabilizing process of the surface of an activated insulating film, the selective chemical vapor deposition process is performed. CONSTITUTION:A substrate 9 having fine holes in an insulating film is heated in a load lock chamber 1 to be dehydrated and then carried to a sputter-etching chamber 3. Next, Ar gas is led into the chamber 3 to impress a cathode electrode 8 with high-frequency power for sputter-etching process by Ar plasma and then Cl2 gas is led in to produce Cl2 plasma for stabilizing the surface of the activated insulating film. Later, the substrate 9 is carried to a filming chamber 2; Ar is led in the rear side of the substrate 9; and H2 gas is led in to be heated. Then, WF6 in addition to the H2 gas is led in to selectively deposit W in the specified film thickness. Through these procedures, the burying process in excellent selectivity and low interfacial resistance can be performed by performing the selective chemical vapor deposition process after performing the underneath layer cleaning process and stabilizing process. |
