| 摘要 |
PURPOSE:To eliminate side etching and form a resist pattern of high precision by applying a specified mixed gas to the etching gas used for dry-etching the lower layer resist of two-layer structure or three-layer structure resist. CONSTITUTION:To the etching gas used for dry-etching the lower layer resist 2 of two-layer structure or three-layer structure, the following is applied and a resist pattern 4 is formed; mixed gas wherein silicon halogenide is added to O2, or mixed gas wherein water is further added to the above mixed gas. As the silicon halogenide, the following can be representatively used; silicon tetrafluoride (SiF4), silicon tetrachloride (SiCl4), silicon tetrabromide (SiBr4), etc. Thereby, anisotropic etching of high dimensional precision is enabled, and a resist pattern free from under-cut can be formed. |
