发明名称 |
Junction-breakdown protection semiconductor device |
摘要 |
A junction-breakdown protection semiconductor device provides a well region which prevents the junction between a metal conductor and a diffused region from breakdown even under a high voltage or high current input. The junction-breakdown protection semiconductor device includes a metal conductor to which a high voltage is applied a semiconductor region of high impurity concentration having a conductivity type which is opposite to the conductivity type of the substrate is connected to the metal conductor through an opening in an insulating film. A second semiconductor region of the same conductivity type as the first semiconductor region is formed deeper in junction depth than the first semiconductor region under the opening in the insulator for ohmic connection on the surface of the first semiconductor region. This invention has the advantage of increased margin even with a alignment error of the ohmic connection in the fabricating process and thus provides an increased reliability of the semiconductor device.
|
申请公布号 |
US4920445(A) |
申请公布日期 |
1990.04.24 |
申请号 |
US19870121843 |
申请日期 |
1987.11.17 |
申请人 |
SAMSUNG SEMICONDUCTOR AND TELECOMMUNICATIONS CO., LTD. |
发明人 |
JUN, DONG SOO |
分类号 |
H01L29/41;H01L27/02;H01L29/06 |
主分类号 |
H01L29/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|