| 摘要 |
<p>PURPOSE:To set the junction types of photodetectors arbitrarily, and to improve the degree of freedom at a time when the photodetectors having high accuracy are formed by severally isolating a plurality of the photodetectors constituted of a photoelectric conversion layer, etc., while applying insulating films onto the photodetectors. CONSTITUTION:A light-receiving section 40 converts light into an electric signal, and is composed of a plurality of photodetectors 40-1-40-3... isolated at every dot by trenches 41, and each photodetector is constituted of the sandwich structure of a common electrode 42 for shielding light, photoelectric conversion layers 43 consisting of, amorphous silicon hydride (a-Si:H), etc. and discrete electrode 44 made up of the transparent conductive film of indium tin oxide(ITO), etc. Since the trenches 41 are shaped and photodetector 40-1-40-3... are isolated separately, leakage currents in the cross direction can be reduced remarkably, the photodetector having the structure of a P-N junction type, a P-I-N junction type, an N-I-N junction type, etc., can also be used, and the degree of freedom at a time when the light-receiving section 40 having high accuracy is shaped is spread.</p> |
