| 摘要 |
PURPOSE:To stabilize a connection forming process between a transfer gate and a side wall charge storage layer by a method wherein, when the transfer gate and the side wall charge storage layer are connected, the region except a connection part is covered with a mask, arsenic ion is obliquely implanted, and phosphorus ion is vertically implanted. CONSTITUTION:A shallow trench 4 is dug, and an isolation boron implanted trench 3 is formed by oblique implantation of boron for isolation; a deep trench 7 is dug by an oxide film side wall 5, and phosphorus is implanted; the oxide film side wall 5 is eliminated; a region except a necessary part is covered with a mask 12: arsenide ion is obliquely implanted, thereby forming arsenic 8 for connection use; boron is implanted vertically. As a result, at the time of oblique implantation of boron, a high concentration layer 10 of boron can be cancelled by arsenic with a simple treatment. Thereby, a connection forming process between a transfer gate and a side wall charge storage layer can be stabilized. |
