| 摘要 |
PURPOSE:To prepare a semiconductor device having high reliability with improved rate of microfabrication by using a cured film of a specified organopolysiloxane as insulating film. CONSTITUTION:To execute fine processing of a semiconductor device by performing successively a stage for forming a cured organopolysiloxane film obtd. by cocondensing silicone-based oligomers or polymers of a component (A) and (B) on a specified semiconductor substrate, a stage for coating the cured film with a photoresist and forming a desired pattern, a stage for etching the organopolysiloxane cured film using the resist as protective film and forming the desired pattern, and a stage for processing the semiconductor substrate to the desired shape using the cured organopolysiloxane film as protective film by etching, etc. The component (A) is a ladder type silicone oligomer or polymer having a specified mol.wt. of a specified wt.% OH group and alkoxy group. The component (B) is a silicone oligomer or polymer having a specified mol.wt. obtd. by the condensation of a silicone compd. expressed by the general formula I and a silicone compd. expressed by the general formula II. |
