发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To reduce parasitic capacity and to enable modulation by high frequency by providing a thick insulating layer under a bonding pad. CONSTITUTION:A thick insulating layer 10 formed on a section remote from a laser active layer 2, a bonding pad 11 formed on the insulating layer 10, a current block layer 8 to inject current effectively to the laser active layer 2, and an isolation groove to isolate the laser active layer 2 electrically are provided. A groove is formed to bury the insulating layer 10 in a section remote from the isolation groove 9 and the laser active layer 2. Then the insulating layer 10 is buried, and lastly, the bonding pad 11 is formed by performing patterning on the insulating layer 10. Parasitic capacity exists mainly under the current block layer 8 and the bonding pad 11 on the side of the laser active layer 2. Parasitic capacity under the bonding pad 11 can be reduced satisfactorily by using polyimide, etc., being an insulating material because it depends on a dielectric constant and a thickness of the insulating layer 10.
申请公布号 JPH0298985(A) 申请公布日期 1990.04.11
申请号 JP19880251114 申请日期 1988.10.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 WATANABE HITOSHI
分类号 H01S5/00;H01S5/022;H01S5/042;H01S5/062;H01S5/227 主分类号 H01S5/00
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