| 摘要 |
PURPOSE:To produce a blue colored light emitting element in high brightness by a method wherein a light emitting element made of zinc selenide sulfide is composed using pn junction while the etch pit density of p type layer is specified. CONSTITUTION:A blue colored light emitting element is formed using pn junction of ZnSxSe1-x (x=0.09) so that the etch pit density of a p type crystal in pn junction region to be a light emitting region may not exceed 3X10<5>cm<-2>. Through these procedures, the concentration in the part excluding the light emitting center can be lessened by reducing the etch pit density so that the efficiency of blue colored light emission may be improved. |
