| 摘要 |
PROBLEM TO BE SOLVED: To prevent the resistance increase of source-and-drain region and enable high-speed and stable operation by forming a conductivity-type of lightly doped region under a groove for removing the damaged layer during formation of a sidewall insulator. SOLUTION: A damage layer being made at the surface part of a first lightly doped region 5 at formation of a sidewall insulator 6y is removed by forming a groove 8 at the section, excluding the section right under the sidewall insulator 6y of the first lightly doped region 5. For that, the junction property is improved by reducing the leak current at the junction part between the source and drain regions and a silicon substrate 1. Furthermore, a second lightly doped region 10 of the same conductivity type as that of the first lightly doped region 5 is made under the groove 8. Hereby, the resistance of the source and drain regions accompanying the removal of the damaged layer can be prevented, and a semiconductor device which performs high-speed and stable operation can be materialized. |
